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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 3SK140 |
| Description | N-CHANNEL; Maximum Drain Current (ID): .05 A; Maximum Drain Current (Abs) (ID): .05 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; JESD-609 Code: e0; Maximum Power Dissipation Ambient: .15 W; |
| Datasheet | 3SK140 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
| Maximum Drain Current (ID): | .05 A |
| Maximum Drain Current (Abs) (ID): | .05 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Power Dissipation Ambient: | .15 W |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |









