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Manufacturer | Toshiba |
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Manufacturer's Part Number | 3SK140 |
Description | N-CHANNEL; Maximum Drain Current (ID): .05 A; Maximum Drain Current (Abs) (ID): .05 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; JESD-609 Code: e0; Maximum Power Dissipation Ambient: .15 W; |
Datasheet | 3SK140 Datasheet |
NAME | DESCRIPTION |
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Field Effect Transistor Technology: | METAL SEMICONDUCTOR |
Maximum Drain Current (ID): | .05 A |
Maximum Drain Current (Abs) (ID): | .05 A |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | N-CHANNEL |
Maximum Power Dissipation Ambient: | .15 W |
Terminal Finish: | Tin/Lead (Sn/Pb) |
JESD-609 Code: | e0 |