3SK151TE85L by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	3SK151TE85L
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Datasheet	3SK151TE85L Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.03 A
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Case Connection:	SOURCE
Minimum Power Gain (Gp):	21 dB
Maximum Feedback Capacitance (Crss):	.04 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	15 V
Qualification:	Not Qualified

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