Toshiba - 3SK256TE85L

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3SK256TE85L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 3SK256TE85L
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
Datasheet 3SK256TE85L Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 18 dB
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): .03 pF
Maximum Drain Current (ID): .03 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 4
Minimum DS Breakdown Voltage: 13.5 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, DEPLETION MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
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