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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 3SK292(TE85R,F) |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12.5 V; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; |
| Datasheet | 3SK292(TE85R,F) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 23.5 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Feedback Capacitance (Crss): | .04 pF |
| Maximum Drain Current (ID): | .03 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 12.5 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, DEPLETION MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
