Toshiba - 3SK292(TE85R,F)

  1. Home
  2. Toshiba - 3SK292(TE85R,F)
3SK292(TE85R,F) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 3SK292(TE85R,F)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12.5 V; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet 3SK292(TE85R,F) Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 23.5 dB
Other Names: 3SK292(TE85RF)TR
3SK292(TE85RF)DKR
3SK292(TE85RF)CT
3SK292 (TE85R,F)
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): .04 pF
Maximum Drain Current (ID): .03 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 12.5 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, DEPLETION MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2SK1242 by Onsemi

2SK1242

Onsemi

N-CHANNEL; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A;
934057514115 by NXP Semiconductors

934057514115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 6 V;
BF545B-T by NXP Semiconductors

BF545B-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3; Terminal Position: DUAL;
BF989-TAPE-7 by NXP Semiconductors

BF989-TAPE-7

NXP Semiconductors

BF989-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount device excels in high-temperature environments up to 150 °C.
NE3210S01-T1B by Nec Electronics

NE3210S01-T1B

Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: SILICON; Highest Frequency Band: KU BAND;
BF245RLRE by Onsemi

BF245RLRE

Onsemi

BF245RLRE by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3 (THROUGH-HOLE).
BFU310 by NXP Semiconductors

BFU310

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: O-MBCY-W3;
BF545B,215 by NXP Semiconductors

BF545B,215

NXP Semiconductors

BF545B,215 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, this transistor comes in a PLASTIC/EPOXY package with GULL WING terminals.
BF545B-TAPE-13 by NXP Semiconductors

BF545B-TAPE-13

NXP Semiconductors

BF545B-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF908WR-TAPE-7 by NXP Semiconductors

BF908WR-TAPE-7

NXP Semiconductors

BF908WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount transistor ensures efficient performance with a max temp of 150 °C.
BF556A-TAPE-7 by NXP Semiconductors

BF556A-TAPE-7

NXP Semiconductors

BF556A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF901R-T by NXP Semiconductors

BF901R-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;
2N3823 by Texas Instruments

2N3823

Texas Instruments

2N3823 by Texas Instruments is an N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.3W power dissipation at 200°C max temp.
BF909TRL by NXP Semiconductors

BF909TRL

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF908R-TAPE-7 by NXP Semiconductors

BF908R-TAPE-7

NXP Semiconductors

BF908R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in the ultra-high frequency band, and supports dual gate depletion mode. Ideal for compact surface mount designs, it ensures efficient performance in various electronic circuits.
2N3819 by Onsemi

2N3819

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 25 V; Maximum Operating Temperature: 150 Cel;
BF245AZL1 by Onsemi

BF245AZL1

Onsemi

BF245AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
934020430215 by NXP Semiconductors

934020430215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
2N4224 by Texas Instruments

2N4224

Texas Instruments

2N4224 by Texas Instruments is a N-CHANNEL FET with 30V DS Breakdown Voltage, 10dB Power Gain, and 0.3W Power Dissipation. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation.
NE3515S02-T1D-A by Nec Electronics America

NE3515S02-T1D-A

Nec Electronics America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Highest Frequency Band: KU BAND; Field Effect Transistor Technology: HETERO-JUNCTION;