Toshiba - 3SK320TE85L

3SK320TE85L by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	3SK320TE85L
Description	N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: .1 W; JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet	3SK320TE85L Datasheet

3SK320TE85L Technical Details

NAME	DESCRIPTION
Field Effect Transistor Technology:	METAL SEMICONDUCTOR
Maximum Operating Temperature:	125 Cel
Sub-Category:	FET RF Small Signal
Polarity or Channel Type:	N-CHANNEL
Maximum Power Dissipation Ambient:	.1 W
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0

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