Toshiba - 3SK320TE85L

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3SK320TE85L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 3SK320TE85L
Description N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: .1 W; JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet 3SK320TE85L Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 125 Cel
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .1 W
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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