Toshiba - DF10G5M4N

DF10G5M4N by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number DF10G5M4N
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet DF10G5M4N Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Config: COMMON ANODE, 5 ELEMENTS
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount: YES
Maximum Reverse Current: .1 uA
No. of Terminals: 10
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 30 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-N10
Minimum Breakdown Voltage: 4 V
No. of Elements: 5
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 150 Cel
Maximum Breakdown Voltage: 6 V
Reverse Test Voltage: 3.6 V
Maximum Repetitive Peak Reverse Voltage: 3.6 V
Maximum Clamping Voltage: 15 V
Diode Element Material: SILICON
Nominal Breakdown Voltage: 5 V
Reference Standard: IEC-61000-4-2, 4-5
Peak Reflow Temperature (C): 260
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