DF10G6M4N by Toshiba | Diodes

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Manufacturer	Toshiba
Manufacturer's Part Number	DF10G6M4N
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	DF10G6M4N Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Breakdown Voltage:	8 V
Maximum Time At Peak Reflow Temperature (s):	30
Config:	COMMON ANODE, 5 ELEMENTS
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage:	5.5 V
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	10
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	30 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-N10
Minimum Breakdown Voltage:	5.6 V
No. of Elements:	5
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Reference Standard:	IEC-61000-4-2, 4-5
Peak Reflow Temperature (C):	260

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