DF2B12M4SL,L3F(B by Toshiba | Diodes

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Manufacturer	Toshiba
Manufacturer's Part Number	DF2B12M4SL,L3F(B
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	DF2B12M4SL,L3F(B Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	YES
Maximum Reverse Current:	.1 uA
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	22 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-N2
Minimum Breakdown Voltage:	11.5 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Maximum Breakdown Voltage:	16 V
Reverse Test Voltage:	11 V
Maximum Repetitive Peak Reverse Voltage:	11 V
Maximum Clamping Voltage:	22 V
Diode Element Material:	SILICON
Nominal Breakdown Voltage:	13.5 V
Additional Features:	LOW CAPACITANCE
Reference Standard:	IEC-61000-4-2,4-5
Peak Reflow Temperature (C):	NOT SPECIFIED

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