DF2B6.8M1ACT,L3F(B by Toshiba | Diodes

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Manufacturer	Toshiba
Manufacturer's Part Number	DF2B6.8M1ACT,L3F(B
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	DF2B6.8M1ACT,L3F(B Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Breakdown Voltage:	11 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage:	5 V
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	2
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Non Repetitive Peak Reverse Power Dissipation:	50 W
Technology:	AVALANCHE
JESD-30 Code:	R-XBCC-N2
Minimum Breakdown Voltage:	6 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Polarity:	BIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Reference Standard:	IEC-61000-4-5
Peak Reflow Temperature (C):	NOT SPECIFIED

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