Toshiba - DF3A3.3FU(TE85L)

DF3A3.3FU(TE85L) by Toshiba

Image shown is a representation only.

Manufacturer	Toshiba
Manufacturer's Part Number	DF3A3.3FU(TE85L)
Description	ZENER DIODE; Surface Mount: YES; Maximum Dynamic Impedance: 130 ohm; Maximum Operating Temperature: 125 Cel; Maximum Voltage Tolerance: 6 %; Maximum Power Dissipation: .1 W;
Datasheet	DF3A3.3FU(TE85L) Datasheet

DF3A3.3FU(TE85L) Technical Details

NAME	DESCRIPTION
Working Test Current:	5 mA
Diode Type:	ZENER DIODE
Nominal Reference Voltage:	3.3 V
Maximum Power Dissipation:	.1 W
Maximum Operating Temperature:	125 Cel
Sub-Category:	Voltage Reference Diodes
Surface Mount:	YES
Maximum Dynamic Impedance:	130 ohm
Maximum Voltage Tolerance:	6 %

Popular Products

1N4148

First Components International

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;

LM358N

Texas Instruments

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

LM358AN

Signetics

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

SMBJ18CA

Jiangsu Jiejie Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2N7002

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

2N2222A

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

1N4148WS

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LL4148

Secos

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BSS138

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

Category Top Products