Toshiba - GT50NR21,Q(O

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GT50NR21,Q(O by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT50NR21,Q(O
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 50 A; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 1050 V;
Datasheet GT50NR21,Q(O Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 230 W
Maximum Collector-Emitter Voltage: 1050 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 25 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Fall Time (tf): 400 ns
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