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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | GT5G133 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Nominal Turn On Time (ton): 2100 ns; No. of Terminals: 8; |
| Datasheet | GT5G133 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Sub-Category: | Insulated Gate BIP Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Nominal Turn Off Time (toff): | 2100 ns |
| No. of Terminals: | 8 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | .83 W |
| Maximum Collector-Emitter Voltage: | 400 V |
| Terminal Position: | DUAL |
| Nominal Turn On Time (ton): | 2100 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 4 V |
