GT8G131(TE12L) by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	GT8G131(TE12L)
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 8 A; Maximum Gate-Emitter Threshold Voltage: 1.5 V;
Datasheet	GT8G131(TE12L) Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	1.5 V
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Nominal Turn Off Time (toff):	2400 ns
No. of Terminals:	8
Maximum Power Dissipation (Abs):	1.1 W
Maximum Collector-Emitter Voltage:	400 V
Terminal Position:	DUAL
Nominal Turn On Time (ton):	1700 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	6 V
Maximum VCEsat:	7 V

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