Toshiba - HN1A02FGR(TE85L,F)

HN1A02FGR(TE85L,F) by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	HN1A02FGR(TE85L,F)
Description	PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 200; Maximum Operating Temperature: 150 Cel;
Datasheet	HN1A02FGR(TE85L,F) Datasheet

HN1A02FGR(TE85L,F) Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	.8 A
Maximum Power Dissipation (Abs):	.3 W
Maximum Operating Temperature:	150 Cel
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	200

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