Toshiba - HN1B01FGR

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HN1B01FGR by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN1B01FGR
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A;
Datasheet HN1B01FGR Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 6
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
Maximum Power Dissipation Ambient: .3 W
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 200
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Maximum VCEsat: .25 V
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