HN1B01FYTE85R by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	HN1B01FYTE85R
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A;
Datasheet	HN1B01FYTE85R Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	150 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN AND PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	120
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.3 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel
Maximum VCEsat:	.25 V
Maximum Power Dissipation Ambient:	.3 W

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