Toshiba - HN1C01FU-Y,LXHF

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HN1C01FU-Y,LXHF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN1C01FU-Y,LXHF
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;
Datasheet HN1C01FU-Y,LXHF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Other Names: 264-HN1C01FU-Y,LXHFTR
264-HN1C01FU-Y,LXHFDKR
264-HN1C01FU-Y,LXHFCT-ND
264-HN1C01FU-Y,LXHFCT
264-HN1C01FU-Y,LXHFDKR-ND
264-HN1C01FU-YLXHFCT
264-HN1C01FU-Y,LXHFTR-ND
264-HN1C01FU-YLXHFDKR
264-HN1C01FU-YLXHFTR
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
No. of Terminals: 6
Maximum Power Dissipation (Abs): .2 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: 3.5 pF
Reference Standard: AEC-Q101
Maximum VCEsat: .25 V
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