Toshiba - HN1C01FYTE85R

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HN1C01FYTE85R by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN1C01FYTE85R
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A;
Datasheet HN1C01FYTE85R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
Maximum Power Dissipation Ambient: .3 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 120
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Maximum Collector-Base Capacitance: 3.5 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .25 V
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