HN1L02FU by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	HN1L02FU
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V;
Datasheet	HN1L02FU Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.05 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	6
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.05 A
Maximum Drain-Source On Resistance:	40 ohm

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