Toshiba - HN2A01FUTE85L

HN2A01FUTE85L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN2A01FUTE85L
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;
Datasheet HN2A01FUTE85L Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .2 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: 7 pF
Maximum VCEsat: .3 V
Maximum Power Dissipation Ambient: .2 W
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