Toshiba - HN2E02F-Y

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HN2E02F-Y by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN2E02F-Y
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A;
Datasheet HN2E02F-Y Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 60 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
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