Toshiba - HN3A51F

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HN3A51F by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN3A51F
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet HN3A51F Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Maximum Collector-Emitter Voltage: 120 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Maximum Operating Temperature: 150 Cel
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