Toshiba - HN3C06FTE85R

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HN3C06FTE85R by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN3C06FTE85R
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 30;
Datasheet HN3C06FTE85R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .08 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: 1 pF
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