Toshiba - HN3G01J

HN3G01J by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number HN3G01J
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR; Surface Mount: YES; Maximum Collector Current (IC): .15 A; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;
Datasheet HN3G01J Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): 3 pF
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
No. of Terminals: 5
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products