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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | HN3GO1J |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-X5; |
| Datasheet | HN3GO1J Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | JUNCTION |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-X5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | DEPLETION MODE |









