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Manufacturer | Toshiba |
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Manufacturer's Part Number | HN3GO1J |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-X5; |
Datasheet | HN3GO1J Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | JUNCTION |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 5 |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-X5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | DEPLETION MODE |