HN4A08J by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	HN4A08J
Description	PNP; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): .8 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet	HN4A08J Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	120 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.8 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON EMITTER, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	40
No. of Terminals:	5
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

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