Toshiba - HN4B101J

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HN4B101J by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN4B101J
Description NPN AND PNP; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .85 W; Maximum Collector Current (IC): 1.2 A; Package Style (Meter): SMALL OUTLINE;
Datasheet HN4B101J Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.2 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 125
No. of Terminals: 5
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .85 W
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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