Toshiba - HN4C51J

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HN4C51J by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN4C51J
Description NPN; Configuration: COMMON BASE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet HN4C51J Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON BASE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .3 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 200
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 120 V
Additional Features: LOW NOISE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .3 V
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