Toshiba - HN7G01FU-B

HN7G01FU-B by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN7G01FU-B
Description PNP; Configuration: SINGLE WITH BUILT-IN FET; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .4 A; No. of Terminals: 6;
Datasheet HN7G01FU-B Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .4 A
Configuration: SINGLE WITH BUILT-IN FET
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 500
Terminal Finish: TIN SILVER
JESD-609 Code: e2
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .2 W
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
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