Toshiba - HN7G10FE

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HN7G10FE by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN7G10FE
Description NPN; Configuration: SINGLE WITH BUILT-IN FET AND DIODE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: FLAT; Transistor Application: SWITCHING;
Datasheet HN7G10FE Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN FET AND DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 300
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
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