Toshiba - JDV2S10T

BB219TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

MMBV409LT1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200 and nominal capacitance of 29 pF. It operates in the very high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.

1N5441 by Onsemi is a varactor diode with a min quality factor of 450, abrupt variable capacitance classification, and max reverse current of 0.00000002 uA. It is used in applications requiring precise voltage control such as RF tuning circuits and frequency modulators.

MV2109RLRP by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it ideal for RF tuning circuits in communication systems.

MMBV109LT1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a hyperabrupt variable capacitance diode classification and a nominal capacitance of 29 pF. This small outline diode has a max power dissipation of 0.2 W and operates at a min breakdown voltage of 30 V.

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .225 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Diode Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The NXP Semiconductors BB148 is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 39.3 pF. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. With a min operating temperature of -55 °C and max of 125 °C, it offers reliable performance across a wide temperature range.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 42 pF; Minimum Quality Factor: 100;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 25 V; Nominal Diode Capacitance: .2 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;