Toshiba - JS8819AS

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JS8819AS by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number JS8819AS
Description N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (Abs) (ID): .1 A; Maximum Power Dissipation Ambient: .4 W;
Datasheet JS8819AS Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): .1 A
Maximum Drain Current (Abs) (ID): .1 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .4 W
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