Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | JS8853-AS |
| Description | RF Small Signal Field-Effect Transistors; No. of Terminals: 6; JESD-30 Code: DIE-6; Terminal Finish: TIN LEAD; Transistor Application: AMPLIFIER; Transistor Element Material: GALLIUM ARSENIDE; |
| Datasheet | JS8853-AS Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .65 A |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 15 V |
| Qualification: | Not Qualified |
| Package Style (Meter): | DIE |
| JESD-30 Code: | DIE-6 |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | KU BAND |









