Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | JS8855-AS |
| Description | RF Small Signal Field-Effect Transistors; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: DEPLETION MODE; No. of Terminals: 5; Package Body Material: UNSPECIFIED; |
| Datasheet | JS8855-AS Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 1.3 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 5 |
| Minimum DS Breakdown Voltage: | 15 V |
| Qualification: | Not Qualified |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N5 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | KU BAND |









