Toshiba - KPM5VBUG1T60

  1. Home
  2. Toshiba - KPM5VBUG1T60
KPM5VBUG1T60 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number KPM5VBUG1T60
Description FLASH MODULE; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 5.5 V; Organization: 1TX8; Maximum Operating Temperature: 60 Cel;
Datasheet KPM5VBUG1T60 Datasheet
NAME DESCRIPTION
Memory Density: 8796093022208 bit
Organization: 1TX8
Minimum Supply Voltage (Vsup): 4.65 V
Surface Mount: YES
Memory IC Type: FLASH MODULE
Minimum Operating Temperature: 0 Cel
Memory Width: 8
No. of Functions: 1
No. of Words: 1099511627776 words
Technology: CMOS
No. of Words Code: 1T
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ASYNCHRONOUS
Nominal Supply Voltage / Vsup (V): 5
Maximum Operating Temperature: 60 Cel
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

N25Q032A13ESC40G by Micron Technology

N25Q032A13ESC40G

Micron Technology

N25Q032A13ESC40G by Micron Technology is a NOR type flash memory with 32Mx1 organization, operating at 108MHz. It features a 3V nominal voltage and offers 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation in small outline packages.
SST39SF040-55-4I-NHE-T by Microchip Technology

SST39SF040-55-4I-NHE-T

Microchip Technology

SST39SF040-55-4I-NHE-T by Microchip Technology is a 512Kx8 NOR flash memory with 128 sectors, operating at 5V. It features a max access time of 55ns, endurance of 100k cycles, and supports asynchronous operation. Ideal for industrial applications requiring high-speed data storage in a compact chip carrier package.
SST25VF016B-50-4I-QAF by Silicon Storage Technology

SST25VF016B-50-4I-QAF

Silicon Storage Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VSON; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;
W25Q32JVSSIQTR by Winbond Electronics

W25Q32JVSSIQTR

Winbond Electronics

Winbond Electronics' W25Q32JVSSIQTR is a 32Mb NOR Flash Memory with synchronous operation, 133MHz clock frequency, and 3V programming voltage. Ideal for industrial applications requiring high-speed data storage in a small outline package.
THGBMJG6C1LBAIL by Kioxia Holdings

THGBMJG6C1LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG6C1LBAIL is an 8GX8 flash memory IC with 68719476736-bit memory density. It operates b/w -25°C to 85°C, with a voltage range of 2.7V to 3.6V. This rectangular GRID ARRAY package is surface-mountable and ideal for applications requiring high-speed data storage in compact devices.
S25FL256LAGNFV010 by Cypress Semiconductor

S25FL256LAGNFV010

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Programming Voltage (V): 3;
AT45DB321E-SHF-B by Dialog Semiconductor

AT45DB321E-SHF-B

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;
MTFC32GJDDQ-4MIT by Micron Technology

MTFC32GJDDQ-4MIT

Micron Technology

Micron Technology's MTFC32GJDDQ-4MIT is a 32GB MLC NAND flash memory with 100 terminals in a low-profile grid array package. Operating at 3.3V, it is ideal for industrial applications requiring high-density storage in compact spaces. With CMOS technology and ball terminal form, it offers reliable performance for various flash card solutions.
AT25DF321A-SH-T by Dialog Semiconductor

AT25DF321A-SH-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
EPCS4SI8 by Intel

EPCS4SI8

Intel

EPCS4SI8 by Intel is a small outline flash memory with 512Kx8 organization, operating at up to 40 MHz. It features a synchronous mode, 3-state output, and industrial temperature grade. Ideal for configuration memory applications requiring high endurance with 100000 write/erase cycles.
S25FL256SAGNFI001 by Infineon Technologies

S25FL256SAGNFI001

Infineon Technologies

S25FL256SAGNFI001 by Infineon Technologies is a NOR type Flash Memory with 64Mx4 organization, SPI serial bus type, and 100000 write/erase cycles endurance. It operates at 3V with a max clock frequency of 133MHz. Ideal for industrial applications requiring reliable data storage in compact devices.
SST25VF016B-50-4I-QAF-T by Microchip Technology

SST25VF016B-50-4I-QAF-T

Microchip Technology

SST25VF016B-50-4I-QAF-T by Microchip: NOR flash memory with 16Mx1 organization, 50MHz clock frequency, SPI serial bus. Ideal for industrial applications requiring high endurance and low standby current.
MX25L51245GZ2I-08G by Macronix

MX25L51245GZ2I-08G

Macronix

Macronix's MX25L51245GZ2I-08G is a 128MX4 flash memory IC with 536870912-bit memory density. Operating at 166 MHz, it has a supply voltage range of 2.7V to 3.6V and industrial temperature grade. This small-outline package with dual terminals is ideal for synchronous applications requiring high-speed data storage.
AT45DB321D-SU-SL954 by Atmel

AT45DB321D-SU-SL954

Atmel

Atmel's AT45DB321D-SU-SL954 is a 32Mbit NOR flash memory with SPI interface, operating at 66MHz. It offers 100000 write/erase cycles and supports hardware/software write protection. Ideal for industrial applications requiring reliable data storage in a compact package.
MX25L12835FM2I-10G by Macronix

MX25L12835FM2I-10G

Macronix

Macronix MX25L12835FM2I-10G is a 128Mb NOR Flash Memory with SPI interface, operating at 3V. It offers 104MHz clock frequency and 100K Write/Erase cycles. Ideal for industrial applications requiring high endurance and reliable data storage in compact form factor.
W25Q16JVZPIQ by Winbond Electronics

W25Q16JVZPIQ

Winbond Electronics

W25Q16JVZPIQ by Winbond Electronics is a 16Mb flash memory with synchronous operation, 2MX8 organization, and 133 MHz clock frequency. It is ideal for industrial applications requiring fast data transfer and reliable storage in a compact package with a low profile design.
S29GL256S90DHI010 by Infineon Technologies

S29GL256S90DHI010

Infineon Technologies

S29GL256S90DHI010 by Infineon Technologies is a 32MX8 NAND flash memory with 256 sectors and 33554432 words. Operating at 3V, it offers a max access time of 90ns and endurance of 100000 write/erase cycles. Ideal for applications requiring high-density data storage in devices with limited space and power constraints.
MT25QU128ABB8E12-0AUT by Micron Technology

MT25QU128ABB8E12-0AUT

Micron Technology

Micron Technology's MT25QU128ABB8E12-0AUT is a 16MX8 flash memory IC with 16777216 words capacity. Operating at 166 MHz, it supports synchronous mode and has a supply voltage range of 1.7V to 2V. Designed for automotive applications, this thin-profile grid array package offers high memory density and AEC-Q100 screening level.
M29W160ET70N6E by Micron Technology

M29W160ET70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Functions: 1;
S29GL01GS10DHI010 by Spansion

S29GL01GS10DHI010

Spansion

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V;