Toshiba - MG15N6EK1

  1. Home
  2. Toshiba - MG15N6EK1
MG15N6EK1 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MG15N6EK1
Description NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 900 V; No. of Terminals: 19;
Datasheet MG15N6EK1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 15 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
No. of Terminals: 19
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 900 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X19
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP111 by Samsung

TIP111

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
MJD112T4G by Onsemi

MJD112T4G

Onsemi

MJD112T4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 2A, and min DC current gain of 200. With a package style of small outline and surface mount capability, it operates up to 150°C making it suitable for various power applications.
TIP125 by Texas Instruments

TIP125

Texas Instruments

TIP125 by Texas Instruments is a PNP BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for applications requiring high current amplification in a Darlington configuration with built-in resistor. Suitable for use in power control circuits due to its high operating temperature of 150°C.
BD138 by Continental Device India

BD138

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BUX87 by Baneasa S A

BUX87

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
BD1396STU by Fairchild Semiconductor

BD1396STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BD679 by Motorola

BD679

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Maximum Power Dissipation Ambient: 40 W; Transistor Application: AMPLIFIER;
BD679AS by Fairchild Semiconductor

BD679AS

Fairchild Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP127 by Continental Device India

TIP127

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
TIP35C by Central Semiconductor

TIP35C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BD140-16 by Samsung

BD140-16

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
2N3055 by Microchip Technology

2N3055

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A;
MJD31CG by Onsemi

MJD31CG

Onsemi

MJD31CG by Onsemi is a NPN BJT transistor with 100V VCEO, 3A IC, and 15W Ptot. Ideal for amplifier applications, it operates b/w -65 to 150°C with hFE of at least 10. This Gull Wing package has a small outline style and can handle peak reflow at 260°C for up to 30s.
NJVMJD45H11T4G by Onsemi

NJVMJD45H11T4G

Onsemi

NJVMJD45H11T4G by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates b/w -55 to 150°C. Its small outline package and high transition frequency of 90MHz make it suitable for various electronic designs.
SBCP53-16T1G by Onsemi

SBCP53-16T1G

Onsemi

SBCP53-16T1G by Onsemi is a PNP BJT transistor with 80V VCE, 1.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers high performance in compact designs.
TIP42C by Inchange Semiconductor

TIP42C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP117 by Central Semiconductor

TIP117

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP115 by Samsung

TIP115

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
2N3055 by Space Power Electronics

2N3055

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP110 by Onsemi

TIP110

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;