Toshiba - MG15Q6ES1

  1. Home
  2. Toshiba - MG15Q6ES1
MG15Q6ES1 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MG15Q6ES1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 1200 V; Qualification: Not Qualified; No. of Elements: 6;
Datasheet MG15Q6ES1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 15 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
No. of Elements: 6
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IXXX300N60B3 by IXYS Corporation

IXXX300N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
HGTG18N120BND by Fairchild Semiconductor

HGTG18N120BND

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;
FZ600R17KE3S4HOSA1 by Infineon Technologies

FZ600R17KE3S4HOSA1

Infineon Technologies

Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
F4-75R06W1E3 by Eupec & Kg

F4-75R06W1E3

Eupec & Kg

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Case Connection: ISOLATED;
RGS80TSX2DHRC11 by ROHM

RGS80TSX2DHRC11

ROHM

ROHM's RGS80TSX2DHRC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 80A, and Pmax of 555W. Ideal for power control applications due to its high voltage rating (1200V) and fast switching times (ton: 89ns, toff: 629ns). Suitable for use in automotive electronics meeting AEC-Q101 standards.
ISL9V3040P3 by Onsemi

ISL9V3040P3

Onsemi

ISL9V3040P3 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a Max Collector-Emitter Voltage of 450V and can handle a Max Collector Current of 21A. This IGBT comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
IRGPS40B120UPBF by International Rectifier

IRGPS40B120UPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 115 ns;
SKM400GB125D by Semikron International

SKM400GB125D

Semikron International

Semikron International's SKM400GB125D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 3.85V and Max IC of 400A, it operates at up to 150°C with a VCE of 1200V. This RECTANGULAR package has 7 terminals and meets IEC-60747-1 & UL standards.
IRGP35B60PDPBF by International Rectifier

IRGP35B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
IKW25N120H3FKSA1 by Infineon Technologies

IKW25N120H3FKSA1

Infineon Technologies

IKW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
FS50R07W1E3B11ABOMA1 by Infineon Technologies

FS50R07W1E3B11ABOMA1

Infineon Technologies

Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
SGL50N60RUFDTU by Fairchild Semiconductor

SGL50N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
IXDN75N120 by Littelfuse

IXDN75N120

Littelfuse

IXDN75N120 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 660W power dissipation. Ideal for motor control applications due to its fast ton of 150ns and low toff of 700ns. Recognized by UL, it features a flange mount package style for easy installation.
IGW40N120H3FKSA1 by Infineon Technologies

IGW40N120H3FKSA1

Infineon Technologies

IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.
STGP15H60DF by STMicroelectronics

STGP15H60DF

STMicroelectronics

STGP15H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 30A IC, and 115W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 225ns turn-off time, and -55 to 175°C operating temperature range.
IKP40N65F5XKSA1 by Infineon Technologies

IKP40N65F5XKSA1

Infineon Technologies

IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
IRGPS60B120KDP by Infineon Technologies

IRGPS60B120KDP

Infineon Technologies

IRGPS60B120KDP by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It is commonly used in motor control applications due to its single configuration with built-in diode.
BSM50GP120BOSA1 by Infineon Technologies

BSM50GP120BOSA1

Infineon Technologies

Infineon Technologies' BSM50GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 430ns and a max operating temperature of 150°C. Ideal for applications requiring high current handling capabilities in complex configurations.
IRGPS40B120UPBF by Infineon Technologies

IRGPS40B120UPBF

Infineon Technologies

IRGPS40B120UPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is commonly used in motor control applications due to its fast nominal turn on time of 115ns and nominal turn off time of 357ns.
STGD10NC60HT4 by STMicroelectronics

STGD10NC60HT4

STMicroelectronics

STGD10NC60HT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 60W Ptot. Ideal for POWER CONTROL applications, it has a toff of 247ns and ton of 19ns. The GULL WING package style makes it suitable for surface mount designs in various electronic systems.