MG25N6ES46 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG25N6ES46
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 1000 V; Qualification: Not Qualified; Transistor Element Material: SILICON;
Datasheet	MG25N6ES46 Datasheet

NAME	DESCRIPTION
Maximum Collector Current (IC):	25 A
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1000 V
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
No. of Elements:	6
Polarity or Channel Type:	N-CHANNEL

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