MG30G2DL1 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG30G2DL1
Description	NPN; Configuration: 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Maximum Operating Temperature: 150 Cel;
Datasheet	MG30G2DL1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	30 A
Configuration:	2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Power
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	100
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	250 W
Maximum Collector-Emitter Voltage:	450 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum VCEsat:	2 V
Maximum Fall Time (tf):	2000 ns

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