Toshiba - MG30H1BL1

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MG30H1BL1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG30H1BL1
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Maximum Collector Current (IC): 30 A; Transistor Element Material: SILICON; Case Connection: ISOLATED; Maximum Collector-Emitter Voltage: 550 V;
Datasheet MG30H1BL1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 550 V
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
No. of Elements: 1
Case Connection: ISOLATED
Polarity or Channel Type: NPN
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