Toshiba - MG30H2DM1

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MG30H2DM1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG30H2DM1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 8; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 500 V;
Datasheet MG30H2DM1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 60 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 8
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .205 ohm
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