MG30H2YM1 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG30H2YM1
Description	N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Transistor Application: SWITCHING; Terminal Form: UNSPECIFIED;
Datasheet	MG30H2YM1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	60 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	7
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.205 ohm

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