Toshiba - MG30M1BN1

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MG30M1BN1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG30M1BN1
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Minimum DC Current Gain (hFE): 4.5; Package Style (Meter): FLANGE MOUNT;
Datasheet MG30M1BN1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 30 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 4.5
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 900 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
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