Toshiba - MG50G2YL1

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MG50G2YL1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG50G2YL1
Description Power Bipolar Transistors; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; Minimum DC Current Gain (hFE): 100; Maximum Operating Temperature: 150 Cel; Maximum Fall Time (tf): 2000 ns;
Datasheet MG50G2YL1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 300 W
Maximum Rise Time (tr): 1000 ns
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Power
Minimum DC Current Gain (hFE): 100
Maximum VCEsat: 2 V
Maximum Fall Time (tf): 2000 ns
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