Toshiba - MG50G2YL1

MG50G2YL1 by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	MG50G2YL1
Description	Power Bipolar Transistors; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; Minimum DC Current Gain (hFE): 100; Maximum Operating Temperature: 150 Cel; Maximum Fall Time (tf): 2000 ns;
Datasheet	MG50G2YL1 Datasheet

MG50G2YL1 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	50 A
Maximum Power Dissipation (Abs):	300 W
Maximum Rise Time (tr):	1000 ns
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Sub-Category:	BIP General Purpose Power
Minimum DC Current Gain (hFE):	100
Maximum VCEsat:	2 V
Maximum Fall Time (tf):	2000 ns

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