Toshiba - MG50N6ES40

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MG50N6ES40 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG50N6ES40
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1000 V; Qualification: Not Qualified;
Datasheet MG50N6ES40 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1000 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
No. of Elements: 6
Polarity or Channel Type: N-CHANNEL
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