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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG75G1JL1 |
| Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Maximum Collector Current (IC): 75 A; No. of Elements: 1; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 450 V; |
| Datasheet | MG75G1JL1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | 75 A |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 450 V |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| No. of Elements: | 1 |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | NPN |









