Toshiba - MG75G2YL1

MG75G2YL1 by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	MG75G2YL1
Description	Power Bipolar Transistors; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2 V; Maximum Rise Time (tr): 2000 ns;
Datasheet	MG75G2YL1 Datasheet

MG75G2YL1 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	75 A
Maximum Power Dissipation (Abs):	350 W
Maximum Rise Time (tr):	2000 ns
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Sub-Category:	BIP General Purpose Power
Minimum DC Current Gain (hFE):	80
Maximum VCEsat:	2 V
Maximum Fall Time (tf):	2000 ns

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