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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG75H2YS1 |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 800 ns; |
| Datasheet | MG75H2YS1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 75 A |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | MOTOR CONTROL |
| Sub-Category: | Insulated Gate BIP Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 800 ns |
| No. of Terminals: | 7 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 350 W |
| Maximum Collector-Emitter Voltage: | 500 V |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 700 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-X7 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Additional Features: | HIGH SPEED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum VCEsat: | 5 V |
