Toshiba - MG75H6EL9

  1. Home
  2. Toshiba - MG75H6EL9
MG75H6EL9 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MG75H6EL9
Description NPN; Configuration: COMPLEX; Maximum Collector Current (IC): 75 A; No. of Elements: 3; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 500 V;
Datasheet MG75H6EL9 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 75 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 500 V
Configuration: COMPLEX
Transistor Element Material: SILICON
No. of Elements: 3
Case Connection: ISOLATED
Polarity or Channel Type: NPN
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP125 by Semitronics

TIP125

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BD13910S by Onsemi

BD13910S

Onsemi

The Onsemi BD13910S is a NPN Power BJT with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.
ULN2803AP by Toshiba

ULN2803AP

Toshiba

Toshiba's ULN2803AP is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.6V, hFE min of 1000, and IC max of 0.5A. With a max operating temp of 85°C and VCE max of 50V, it offers reliable performance in various electronic circuits.
TIP120 by Onsemi

TIP120

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
TIP122 by Rectron

TIP122

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
TIP29C by Baneasa S A

TIP29C

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 3; Transistor Element Material: SILICON;
BD14016 by Fairchild Semiconductor

BD14016

Fairchild Semiconductor

Fairchild Semiconductor's BD14016 is a PNP BJT transistor with 80V VCE, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications due to its single configuration and hFE of 100, it comes in a plastic/epoxy package with through-hole terminals.
BD139 by Kec

BD139

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; Minimum DC Current Gain (hFE): 25;
TIP41C by Microsemi

TIP41C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
BD140-16 by Samsung

BD140-16

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
TIP47 by Motorola

TIP47

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;
MJD117T4 by Motorola

MJD117T4

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; Transistor Application: SWITCHING;
ULN2804A by Motorola

ULN2804A

Motorola

ULN2804A by Motorola is a power BJT with NPN polarity and 8 banks of Darlington configuration. It has a max VCEsat of 1.6V and can handle a max collector current (IC) of 0.5A. This transistor is commonly used for switching applications due to its built-in diode and resistor.
TIP115 by Onsemi

TIP115

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: TIN;
BD139 by Onsemi

BD139

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP110 by Transys Electronics

TIP110

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
BD139 by Shanghai Lunsure Electronic Technology

BD139

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; No. of Terminals: 3;
MJD32CT4G by Onsemi

MJD32CT4G

Onsemi

The Onsemi MJD32CT4G is a PNP BJT transistor with 100V VCE, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. This surface-mount transistor in a small outline package is designed for high-performance amplification.
TIP41C by Samsung

TIP41C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP147 by SPC TECHNOLOGY/ MULTICOMP

TIP147

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;