Toshiba - MG75M1AL1

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MG75M1AL1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG75M1AL1
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Transistor Element Material: SILICON; No. of Terminals: 3;
Datasheet MG75M1AL1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 75 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 450 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: COLLECTOR
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